Medium- and long-term control

  • Research for GaN technologies, devices, packages and applications to address the challenges of the future GaN roadmap

    Project dates: 01. May 2019 - 30. Apr 2022

    Objective

    The main objective of UltimateGaN is to safeguard Europe’s leading position in terms of power semiconductors and high performance RF applications by driving an innovative breakthrough change with the next generation of GaN-technologies. Several predecessor projects are the basis for the availability of the first generation of European based GaN-devices, also revealing that the challenges of these technologies have been heavily underestimated. This makes the high potential of GaN clearly evident to overcome the persisting threats of higher electric fields, current densities and power densities related to the necessity of device shrinkage. The new concept of following a vertical approach to address research through the entire supply chain of technology, packaging, reliability and application will enable a significant improvement of efficiency that goes beyond the limits of silicon based semiconductors in combination with packages that fully utilize the shrink-path of power GaN devices and which are not ready as of today. UltimateGaN’s unique approach addresses, among others, the following innovative applications with the scope to enable digitalisation and energy efficiency for 5G, Smart Grids and Smart Mobility that goes hand in hand with a significant reduction of the CO2 footprint: •Extremely efficient server power supply enabling lower energy consumption in data centres •Benchmark Photovoltaic inverters in terms of efficiency and size to foster the use of renewable energies •Affordable 5G-Amplifiers up to mm-wave enabling a faster 5G rollout •GaN powered LIDAR application to enable autonomous driving •Highest efficiency µ-Grid-converters and On-Board Chargers The global state-of-the-art first generation GaN devices are mainly based on US and Asian suppliers. Only a cooperative project like UltimateGaN with European market leaders and world-class researchers can take on the challenges and bring Europe at the forefront in terms of GaN enabled opportunities.

    Partners

    Number of partners: 26
    Site numbers:

    SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE

    NANO DESIGN SRO

    FOR OPTIMAL RENEWABLE ENERGY SYSTEMS SL

    TECHNISCHE UNIVERSITAET GRAZ

    INFINEON TECHNOLOGIES AUSTRIA AG

    MAX PLANCK INSTITUT FUR EISENFORSCHUNG GMBH

    AT & S AUSTRIA TECHNOLOGIE & SYSTEMTECHNIK AKTIENGESELLSCHAFT

    SILTRONIC AG

    FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

    INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM

    INFINEON TECHNOLOGIES AG

    INFINEON TECHNOLOGIES ITALIA SRL

    ELTEK AS

    • Partner
    • ELTEK AS
    • Norway
    • Budget: 582, 312

    RISE RESEARCH INSTITUTES OF SWEDEN AB

    ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE

    UNIVERSITA DEGLI STUDI DI PADOVA

    LEAR CORPORATION ENGINEERING SPAIN SOCIEDAD LIMITADA

    ATTOLIGHT SA

    SILICON AUSTRIA LABS GMBH

    FRONIUS INTERNATIONAL GMBH

    TECHNISCHE UNIVERSITAET CHEMNITZ

    AIXTRON SE

    NAMLAB GGMBH

    UNIVERSITA' DEGLI STUDI DI MILANO-BICOCCA

    SWEGAN AB

    IKERLAN S. COOP

    Key Exploitable Results

    • TRL

    • Effective use:
    • Barriers:
    • Additional next steps:
    • Investment needed:
  • Selenium – A non-toxic and stable material for future tandem solar cells

    Project dates: 01. Apr 2022 - 31. Mar 2024

    Objective

    Clean energy is crucial for a carbon neutral European continent, and wind, hydropower, geothermal, biomass, and solar energy conversion will generate hundreds of billions economic activity in the coming years. Among these, photovoltaics (PV) plays a crucial part in electricity generation directly transformed from sunlight. Recently, the efficiency of the dominant PV technology, Si, has reached over 26%, which is near the 29.4% theoretical efficiency limit for single-junction solar cells. In order to overcome this limit, the tandem concept that minimizes thermalization losses of photo-excited carriers has been successfully proven with multi-junction cells, where different band gaps are stacked in series. Over the past decades, the main challenge has been the lack of an efficient, long-term stable, low cost, and process compatible top sub-cell. Recently, selenium (Se) became an attractive option because of its suitable high bandgap , feasible process at low temperature, and reported efficiency. This proposal (SeNTASC) aims at developing selenium absorber photovoltaic (Se PV) top subcell stacking with high-efficiency Cu(In,Ga)Se2 (CIGS) bottom subcell toward long-term stable and high-efficiency tandem solar cells by implementing novel approaches in buffer layer bandgap modulation, advanced hole-selective metal oxide layer modification, and finally achieving an inverted bifacial Se PV. The above-mentioned strategies will lead to ~10 % efficiency with open circuit voltage over 1 Volt with bandgap around 1.95 eV in an inverted superstrate configuration. Reaching these objectives, Se will be established as an excellent candidate for a top subcell in a tandem with high-quality CIGS solar cells. In this configuration, a maximum theoretical efficiency near 40% is expected.

    Partners

    Number of partners: 1
    Site numbers:

    LABORATORIO IBERICO INTERNACIONAL DE NANOTECNOLOGIA LIN

    Key Exploitable Results

    • TRL

    • Effective use:
    • Barriers:
    • Additional next steps:
    • Investment needed: